mos field effect transistors 2sk2371/2sK2372 description the 2sk2371/2sK2372 is n-channel mos field effect transistor designed for high voltage switching applications. features ? low on-resistance 2sk2367: r ds(on) = 0.25 w (v gs = 13 v, i d = 10 a) 2sk2368: r ds(on) = 0.27 w (v gs = 13 v, i d = 10 a) ? low c iss c iss = 3600 pf typ. ? high avalanche capability ratings absolute maximum ratings (t a = 25 c) drain to source voltage (2sk2371/2sK2372) v dss 450/500 v gate to source voltage v gss 30 v drain current (dc) i d(dc) 25 a drain current (pulse)* i d(pulse) 100 a total power dissipation (t c = 25 c) p t1 160 w total power dissipation (t a = 25 c) p t2 3.0 w channel temperature t ch 150 c storage temperature t stg C55 ~ +150 c single avalanche current** i as 25 a single avalanche energy** e as 446 mj * pw 10 m s, duty cycle 1 % ** starting t ch = 25 c, r g = 25 w , v gs = 20 v ? 0 the diode connected between the gate and source of the transistor serves as a protector against esd. when this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 1995 data sheet document no. tc-2505 (o.d. no. tc-8064 date published january 1995 p printed in japan switching n-channel power mos fet industrial use body diode source drain gate 3 3.2 ?0.2 4.7 max. 1.5 7.0 2.8 ?0.1 0.6 ?0.1 1.0 ?0.2 2.2 ?0.2 5.45 5.45 15.7 max. 4 12 4.5 ?0.2 20.0 ?0.2 3.0 ?0.2 6.0 1.0 19 min. 1. gate 2. drain 3. source 4. fin (drain) mp-88 package dimensions (in millimeters)
2sk2371/2sK2372 2 electrical characteristics (t a = 25 c) characteristic symbol min. typ. max. unit test condition drain to source on-resistance r ds(on) 0.2 0.25 w v gs = 10 v 2sk2371 0.22 0.27 i d = 13 a 2sK2372 gate to source cutoff voltage v gs(off) 2.5 3.5 v v ds = 10 v, i d = 1 ma forward transfer admittance y fs 8.0 s v ds = 10 v, i d = 13 a drain leakage current i dss 100 m a v ds = v dss , v gs = 0 gate to source leakage current i gss 100 na v gs = 30 v, v ds = 0 input capacitance c iss 3600 pf v ds = 10 v output capacitance c oss 700 pf v gs = 0 reverse transfer capacitance c rss 50 pf f = 1 mhz turn-on delay time t d(on) 40 ns i d = 13 a rise time t r 70 ns v gs = 10 v turn-off delay time t d(off) 160 ns v dd = 150 v fall time t f 60 ns r g = 10 w rl = 11.5 w total gate charge q g 95 nc i d = 25 a gate to source charge q gs 20 nc v dd = 400 v gate to drain charge q gd 40 nc v gs = 10 v body diode forward voltage v f(s-d) 1.0 v i f = 25 a, v gs = 0 reverse recovery time t rr 500 ns i f = 25 a, v gs = 0 reverse recovery charge q rr 4.5 m c di/dt = 50 a/ m s test circuit 1 avalanche capability test circuit 2 switching time v gs = 20-0 v pg. r g = 25 w 50 w d.u.t. l v dd pg. r g = 10 w d.u.t. r l v dd r g pg. i g = 2 ma 50 w d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 t = 1 us duty cycle 1% v gs wave form i d wave form v gs i d 10 % 10 % 0 0 90 % 90 % 90 % 10 % v gs (on) i d t on t off t d (on) t r t d (off) t f t test circuit 3 gate charge the application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2sk2371/2sK2372 3 typical characteristics (t a = 25 c) derating factor of forward bias safe operating area 20 140 160 t c - case temperature - (?) dt - percentage of rated power - % drain current vs. drain to source voltage v ds - drain to source voltage - (v) i d - drain current - (a) forward bias safe operating area 10 100 1 000 v ds - drain to source voltage - (v) i d - drain current - (a) 0 60 40 80 100 120 total power dissipation vs. case temperature 20 140 160 150 t c - case temperature - (?) p t - total power dissipation - (w) 120 0 60 90 30 60 40 80 100 120 180 210 drain current vs. gate to source voltage v gs - gate to source voltage - (v) i d - drain current - (a) 1 1 000 10 100 0.1 1.0 pulsed 515 10 20 15 10 5 0 8 v 6 v 5 v v gs = 10 v 51015 100 1 10 0.1 0 v ds = 10 v pulsed t ch = 125 ? 75 ? 25 ? ?5 ? 100 80 60 40 20 i d (pulse) t a = 25 ? single pulse pw = 10 s 100 s r ds (on) limited ( v gs = 10 v) power dissipation limitd 10 ms 1 ms 2sk2371 2sK2372 i d (dc) i d (dc) m m
2sk2371/2sK2372 4 drain to source on-state resistance vs. gate to source voltage transient thermal resistance vs. pulse width pw - pulse width - (s) r th (t) - transient thermal resistance - (?/w) 10 100 1 m 10 m 100 m 1 10 100 1000 forward transfer admittance vs. drain current 100 i d - drain current - (a) yfs - forward transfer admittance - (s) 51520 v gs - gate to source voltage - (v) r ds (on) - drain to source on-state resistance - ( w ) gate to source cutoff voltage vs. channel temperature t ch - channel temperature - (?) v gs (off) - gate to source cutoff voltage - v drain to source on-state resistance vs. gate to source voltage 1.5 i d - drain current - (a) r ds (on) - drain to source on-state resistance - ( w ) 10 0.1 1.0 0 0.5 1.0 0 1.0 10 1000 100 v ds = 10 v pulsed t ch = ?5 ? 25 ? 75 ? 125? 10 1.5 1.0 0.5 pulsed i d = 25 a 13 a 6 a 1.0 10 1000 100 pulsed v gs = 10 v ?0 0 50 100 150 4.0 3.5 3.0 2.5 2.0 1.5 1.0 t c = 25 ? single pulse r th (ch-a) = 41.7 ?/w r th (ch-c) = 0.78 c/w 1000 100 10 1.0 0.1 0.01 0.001 mm
2sk2371/2sK2372 5 drain to source on-state resistance vs. channel temperature q g - gate charge (nc) v ds - drain to source voltage - (v) t ch - channel temperature - (c) r ds (on) - drain to source on-state resistance - (a) reverse recovery time vs. reverse drain current i f - forward current - (a) t w - reverse recovery time - (ns) dynamic input/output characteristics v gs - gate to source voltage - (v) source to drain diode forward voltage v sd - source to drain voltage - (v) i sd - diode forward current - (a) 1.5 100 10 1.0 0.1 0.01 1.0 0.5 0 capacitance vs. drain to source voltage v ds - drain to source voltage - (v) c iss , c oss , c rss - capacitance - pf 1.0 10 100 1000 i d - drain current - (a) t d (on), t r , t d (off), t f - switching time - (ns) 100 0.1 10 1.0 switching characteristics ?0 0 50 100 150 1.0 0.5 0 i d = 25 a 13 a v gs = 10 v v gs = 0 v pulsed 1000 10000 1 000 100 10 1.0 0.1 1.0 10 100 c iss c oss c rss t r v dd = 150 v v gs = 10 v r in = 10 w 1.0 10 100 600 500 400 300 200 100 0.1 di/dt = 50 a/ s v gs = 0 020 80 40 120 500 400 300 200 100 20 18 16 14 12 10 8 6 4 2 0 60 100 v gs v ds v dd = 400 v 250 v 125 v t f t d (off) t d (on) v gs = 0 v f = 1 mhz m
2sk2371/2sK2372 6 1 m 10 m 100 m l - inductive load - (h) i as - single avalanche energy - (a) single avalanche energy vs. inductive load 100 starting tch - starting channel temperature - (?) e as - single avalanche energy - (mj) single avalanche energy vs. starting channel temperature 25 50 75 125 150 100 600 500 400 300 200 100 0 i as 25 a r g = 25 w v gs = 20 v 0 v dd = 150 v v dd = 150 v r g = 25 w v gs = 20 0 v i as = 25 a e as = 446 mj 100 10 1.0 < = m
2sk2371/2sK2372 7 reference document name document no. nec semiconductor device reliability/quality control system. tei-1202 quality grade on nec semiconductor devices. iei-1209 semiconductor device mounting technology manual. iei-1207 semiconductor device package manual. iei-1213 guide to quality assurance for semiconductor devices. mei-1202 semiconductor selection guide. mf-1134 power mos fet features and application switching power supply. tea-1034 application circuits using power mos fet. tea-1035 safe operating area of power mos fet. tea-1037
2sk2371/2sK2372 [memo] no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: standard, special, and specific. the specific quality grade applies only to devices developed based on a customer designated quality assurance program for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard : computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special : transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific : aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices in standard unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 94.11
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